| PART |
Description |
Maker |
| HYB25L256160AF-7.5 HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| HYB18L128160BC-7.5 HYB18L128160BF-7.5 HYB18L128160 |
DRAMs for Mobile Applications
Very low Power SDRAM optimized for battery-powered, handheld applications
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
Infineon Technologies A...
Infineon Technologies AG
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| ISL76671 ISL76671AROZ-T7 |
Low Power, <100 Lux Optimized, Analog Output Ambient Light Sensor
|
Intersil Corporation
|
| AUIRF7669L2TR1 |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance.
|
International Rectifier
|
| AUIRF7732S2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance
|
International Rectifier
|
| ISL76671AROZ-T7 |
Low Power, <100 Lux Optimized, Analog Output Ambient Light Sensor
|
Intersil Corporation
|
| ISL9N318AD3ST |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| EM669325BG-1H/LG |
4M x 32 Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| CMS6416LAX-75XX |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
| CMS4A16LAF CMS4A16LAG CMS4A16LAH |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
